Item – Theses Canada

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OCLC number
1032915085
Link(s) to full text
LAC copy
LAC copy
Author
Krotnev, Ivan.
Title
Novel Metallic Field-effect Transistors.
Degree
MAST -- University of Toronto, 2013
Publisher
Toronto : University of Toronto, 2013.
Description
1 online resource
Notes
Includes bibliographical references.
Abstract
This thesis describes a novel concept for a field-effect transistor based on metallic channels. Latest research demonstrates that the bulk (3D) properties of many materials begin to change when confined to 2D sheets, or 1D nanowires. Particularly, the bandgap increases and the density of states decreases. In this work, this effect is explored further to demonstrate its application to field-effect transistors. Certain metals such as Gold and Silver in these dimensions have extremely low density of states in particular energy regions and through gate modulation can be partially depleted from electrons thus creating conditions for field-effect. A simulation study of Gold channel FET demonstrates ION/IOFF of 30 and superior current driving capability compared to the state-of-the art 22nm SiGe ETSOI as well as 30nm nanotube transistors.
Other link(s)
hdl.handle.net
tspace.library.utoronto.ca
Subject
metallic.
transistor.
gold.
nanoscale.
simulation.
density of states.
0544.