Item – Theses Canada

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OCLC number
1006987668
Link(s) to full text
LAC copy
LAC copy
Author
Chen, Hsin-Yi,1973-
Title
Inductively coupled plasma etching of InP.
Degree
M.A. Sc. -- University of Toronto, 2000
Publisher
Ottawa : National Library of Canada = Bibliothèque nationale du Canada, [2001]
Description
2 microfiches
Notes
Includes bibliographical references.
Abstract
Inductively coupled plasma (ICP) etching is a promising low-pressure high-density process for pattern transfer required during microelectronic and opto-electronic fabrication. In this work, an ICP system has been successfully constructed for the purpose of etching InP, a highly attractive material for applications in optical communication and high-speed integrated circuits. Different types of gas mixtures including CH4/H2, CH 4/H2/Ar, CH4/H2/N2, H 2/N2 and H2/Ar were used as plasma precursors. The influence of gas composition, RF power, total flow rate and pressure on etch rate, etch profile and surface morphology (roughening and stoichiometry) was studied. CH4/H2-based plasmas provided an anisotropic etching process with high selectivity. Surface roughening and phosphorous-depletion were yielded on etched surfaces due to an imbalance in removal of In and P. ICP etching of InP using H2/NL was demonstrated for the first time. Mirrorlike etched surfaces were obtained. A common occurrence of overcut was found on mesa sidewalls, believed to be due to SiO2 masks erosion.
ISBN
0612541266
9780612541269